|
SUD19N20-90-T4-E3 | Vishay | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R |
DataSheet
|
3.565 | |
|
|
SI4413ADY-T1-GE3 | Vishay | - | 8-SO | Source Voltage Vds:-30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V |
DataSheet
|
2.801 | |
|
|
SI4430BDY-T1-GE3 | Vishay | - | 8-SOIC (0.154", 3.90mm Width) | Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V |
DataSheet
|
2.0636 | |
|
|
SI4463BDY-T1-GE3 | Vishay | - | 8-SOIC (0.154", 3.90mm Width) | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R |
DataSheet
|
1.9419 | |
|
|
SI4874BDY-T1-GE3 | Vishay Siliconix | - | 8-SOIC (0.154", 3.90mm Width) | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
DataSheet
|
1.3624 | |
|
|
SI4922BDY-T1-GE3 | Vishay | - | 8-SO | DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A |
DataSheet
|
1.9845 | |
|
|
SI4936ADY-T1-GE3 | Vishay Siliconix | - | 8-SO | Trans MOSFET N-CH 30V 4.4A 8-Pin SOIC N T/R |
DataSheet
|
1.1209 | |
|
|
SI7668ADP-T1-GE3 | Vishay Siliconix | - | PowerPAK® SO-8 | MOSFET N-CH 30V 40A PPAK SO-8 |
DataSheet
|
market price | |
|
|
SI7806ADN-T1-GE3 | Vishay | - | PowerPAK® 1212-8 | Single N-Channel 30 V 0.016 Ohm 20 nC 1.5W Silicon SMT Mosfet - POWERPAK-1212-8 |
DataSheet
|
1.3799 | |
|
|
SI7840BDP-T1-GE3 | Vishay | - | PowerPAK® SO-8 | MOSFET N-CH 30V 11A PPAK SO-8 |
DataSheet
|
2.517 | |
|
|
WPB4002 | onsemi | - | TO-3PB | Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-3PB |
DataSheet
|
21.265 | |
|
|
RFM04U6P(TE12L,F) | Toshiba | - | PW-MINI | RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 2A 7W 16V |
DataSheet
|
3.815 | |
|
|
RFM12U7X(TE12L,Q) | Toshiba | - | TO-271AA | N-ch Rf-mosfet 20V 4A 12W Pw-x |
DataSheet
|
14.785 | |
|
|
RFM03U3CT(TE12L) | Toshiba | - | RF-CST3 | Mosfet N-ch RF-CST3 |
DataSheet
|
10.4207 | |
|
|
RFM00U7U(TE85L,F) | Toshiba | - | <em class="rohs">Lead free / RoHS Compliant</em> | FET RF N-CH 20V 520MHZ USQ |
DataSheet
|
1.4605 | |
|
|
RD70HVF1-101 | Renesas | - | Available stock | RD70HVF1 is a MOSFET type transistor specifically designed for VHF/UHF High power amplifiers applications. |
DataSheet
|
market price | |
|
|
A2T18S160W31GSR3 | NXP Semiconductors | - | NI-780GS-2L2LA | RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805 |
DataSheet
|
281.555 | |
|
|
AFV09P350-04GNR3 | NXP Semiconductors | - | OM-780G-4L | RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825 |
DataSheet
|
522.66 | |
|
|
BFR843EL3E6327XTSA1 | Infineon | - | 3-XFDFN | : Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p |
DataSheet
|
0.54 | |
|
|
BLF2425M6L180P,118 | Ampleon USA Inc. | - | -- | RF MOSFET Transistors 2.4-2.5GHz 65V 12dB | 381.265 | ||
|
|
FQPF47P06YDTU | onsemi | - | TO-220-3 Full Pack, Formed Leads | Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F |
DataSheet
|
2.8374 | |
|
|
FL6L52060L | Panasonic | - | 6-SMD, Flat Leads | Sc, Pch Power Mos Fet / Power Mosfet For Dc-dc Converter Series |
DataSheet
|
0.404 | |
|
|
FDMS8880 | onsemi | - | 8-PowerTDFN | Trans MOSFET N-CH 30V 13.5A 8-Pin Power 56 EP T/R |
DataSheet
|
0.8415 | |
|
|
FDB8860 | onsemi | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.6mΩ |
DataSheet
|
3.3015 | |
|
|
VP0550N3-G-P013 | Microchip Technology | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
DataSheet
|
2.3617 |
