| ： | SI7806ADN-T1-GE3 |
|---|---|
| ： | RF Transistors |
| ： | Vishay |
| ： | Single N-Channe |
| ： | - |
| ： | PowerPAK® 1212-8 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | SI7806ADN-T1-GE3 |
| Pbfree Code: | Yes |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Not Recommended |
| Ihs Manufacturer: | VISHAY SILICONIX |
| Package Description: | SMALL OUTLINE, S-XDSO-C5 |
| Pin Count: | 8 |
| Reach Compliance Code: | unknown |
| ECCN Code: | EAR99 |
| Manufacturer: | Vishay Siliconix |
| Risk Rank: | 5.16 |
| Avalanche Energy Rating (Eas): | 9.8 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (Abs) (ID): | 9 A |
| Drain Current-Max (ID): | 9 A |
| Drain-source On Resistance-Max: | 0.011 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | S-XDSO-C5 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 5 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | UNSPECIFIED |
| Package Shape: | SQUARE |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | 260 |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 3.7 W |
| Pulsed Drain Current-Max (IDM): | 40 A |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| Terminal Form: | C BEND |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | 30 |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
1.3799
1.3799
10
1.3154
13.154
100
1.2409
124.09
500
1.1764
588.2
1000
1.1019
1101.9
