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AFT20P140-4WGNR3	NXP Semiconductors	-	OM-780G-4L	RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1825	DataSheet	165.18
AFT23S160W02GSR3	NXP Semiconductors	-	NI-780GS-2L	Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V	DataSheet	391.44
AFT09H310-04GSR6	NXP Semiconductors	-	NI-1230S-4 GULL	RF Power Transistor, 920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1806	DataSheet	359.76
A2T07D160W04SR3	NXP Semiconductors	-	NI-780S-4	RF Power Transistor, 716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826	DataSheet	258.4785
BFR840L3RHESDE6327XTSA1	Infineon	-	SC-101, SOT-883	communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass); and C-band LNB (1st and 2nd stage LNA); Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer); Ka-band oscillators (DROs)	DataSheet	0.515
BFP540ESDH6327XTSA1	Infineon	-	SC-82A, SOT-343	); Outstanding Gms = 21.5 dB; Noise Figure F = 0.9 dB; Gold metallization for high reliability; SIEGET 45 - Line; Pb-free (RoHS compliant) package	DataSheet	0.4954
BGA825L6SE6327XTSA1	Infineon	-	6-XFDFN	HBM ESD protection (including AI-pin); Pb-free (RoHS compliant) package \| Target Applications: Deal for all Global Navigation Satellite Systems (GNSS) like GPS, Galileo, GLONASS, COMPASS	DataSheet	0.3976
BLA6G1011LS-200RG,	Ampleon USA Inc.	-	LDMOST	RF MOSFET Transistors PWR LDMOS TRANSISTOR	DataSheet	683.075
BLF2425M6L180P,112	NXP Semiconductors	-	SOT539A	Transistor Rf Powr Ldmos SOT539A	DataSheet	381.265
FK8V03040L	Panasonic	-	8-SMD, Flat Lead	SC, NCH POWER MOS FET / SINGLE, DCDC CONVERTER, VDSS:33V, ID:10A	DataSheet	1.279
FL6L52010L	Panasonic	-	6-SMD, Flat Leads	(on):0.08ohm; Rds(on) Test Voltage Vgs:-4V; Threshold Voltage Vgs:-750mV; Power Dissipation Pd:540mW; Transistor Case Style:WSSMini6-F1; No. of Pins:6; MSL:MSL 1 - Unlimited	DataSheet	0.3789
VMMK-1225-BLKG	Broadcom	-	0402 (1005 Metric)	, WLAN, WLL; RF IC Case Style:LLP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Frequency Max:26GHz; Frequency Min:0.5GHz; Package / Case:LLP; Termination Type:SMD	DataSheet	28.92
TN0104N3-G-P003	Microchip	-	TO-226-3, TO-92-3 (TO-226AA)	Mosfet, N-channel Enhancement-mode, 40V, 1.8 Ohm 3 TO-92 T/r Rohs Compliant: Yes	DataSheet	1.2605
TN0110N3-G-P002	Microchip	-	TO-92-3	Mosfet, N-channel Enhancement-mode, 100V, 3.0 Ohm 3 TO-92 Rvt/r Rohs Compliant: Yes	DataSheet	1.3639
TP2640LG-G	Microchip	-	8-SOIC (0.154", 3.90mm Width)	MOSFET; P-CHANNEL ENHANCEMENT-MODE; -400V; 15 Ohm8 SOIC 3.90mm(.150in) T/R	DataSheet	2.5426
CLF1G0035-50,112	Ampleon USA Inc.	-	SOT467C	RF JFET Transistors Broadband RF power GaN HEMT	DataSheet	395.065
CSD17302Q5A	Texas	-	8-PowerTDFN	; Power Dissipation Pd:3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:87A; Power Dissipation Pd:3W; Voltage Vgs Max:10V	DataSheet	0.985
MAGX-000040-00500P	MA-COM	-	SOT-89	Fet Rf 65V 4GHZ SOT-89	DataSheet	market price
MAGX-000912-500L0S	MA-COM	-	-	Transistor Gan 960-1215MHZ 500W	DataSheet	market price
QPD2730	Qorvo	-	Available stock	RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg	DataSheet	433.44
PXAC261202FCV1R250XTMA1	Infineon Technologies	-	H-37248-4	RF MOSFET Transistors RFP-LD10M	DataSheet	market price
PTFA091503ELV4R0XTMA1	Infineon	-	2-Flatpack, Fin Leads, Flanged	LDMOS FET, High Power RF, 150W, 920-960MHz, H-33288-6 Pkg, T/R 50	DataSheet	market price
IPG20N04S4L07AATMA1	Infineon	-	8-PowerVDFN	for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent	DataSheet	2.3049
IPW65R048CFDAFKSA1	Infineon	-	TO-247-3	650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS	DataSheet	27.265
J108,126	NXP Semiconductors	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Trans JFET N-CH 25V 80mA Si 3-Pin SPT Ammo	DataSheet	1.443

Someone has searched this part IC Chips and others have searched some relevant parts as the following:

AFT20P140-4WGNR3

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NXP Semiconductors

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OM-780G-4L

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RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1825

AFT23S160W02GSR3

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NXP Semiconductors

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NI-780GS-2L

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Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V

AFT09H310-04GSR6

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NXP Semiconductors

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NI-1230S-4 GULL

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RF Power Transistor, 920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1806

A2T07D160W04SR3

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NXP Semiconductors

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NI-780S-4

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RF Power Transistor, 716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826

BFR840L3RHESDE6327XTSA1

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Infineon

：

SC-101, SOT-883

：

communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass); and C-band LNB (1st and 2nd stage LNA); Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer); Ka-band oscillators (DROs)

BFP540ESDH6327XTSA1

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Infineon

：

SC-82A, SOT-343

：

); Outstanding Gms = 21.5 dB; Noise Figure F = 0.9 dB; Gold metallization for high reliability; SIEGET 45 - Line; Pb-free (RoHS compliant) package

BGA825L6SE6327XTSA1

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Infineon

：

6-XFDFN

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HBM ESD protection (including AI-pin); Pb-free (RoHS compliant) package | Target Applications: Deal for all Global Navigation Satellite Systems (GNSS) like GPS, Galileo, GLONASS, COMPASS

BLA6G1011LS-200RG,

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Ampleon USA Inc.

：

LDMOST

：

RF MOSFET Transistors PWR LDMOS TRANSISTOR

BLF2425M6L180P,112

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NXP Semiconductors

：

SOT539A

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Transistor Rf Powr Ldmos SOT539A

FK8V03040L

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Panasonic

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8-SMD, Flat Lead

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SC, NCH POWER MOS FET / SINGLE, DCDC CONVERTER, VDSS:33V, ID:10A

FL6L52010L

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Panasonic

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6-SMD, Flat Leads

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(on):0.08ohm; Rds(on) Test Voltage Vgs:-4V; Threshold Voltage Vgs:-750mV; Power Dissipation Pd:540mW; Transistor Case Style:WSSMini6-F1; No. of Pins:6; MSL:MSL 1 - Unlimited

VMMK-1225-BLKG

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Broadcom

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0402 (1005 Metric)

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, WLAN, WLL; RF IC Case Style:LLP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Frequency Max:26GHz; Frequency Min:0.5GHz; Package / Case:LLP; Termination Type:SMD

TN0104N3-G-P003

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Microchip

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TO-226-3, TO-92-3 (TO-226AA)

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Mosfet, N-channel Enhancement-mode, 40V, 1.8 Ohm 3 TO-92 T/r Rohs Compliant: Yes

TN0110N3-G-P002

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Microchip

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TO-92-3

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Mosfet, N-channel Enhancement-mode, 100V, 3.0 Ohm 3 TO-92 Rvt/r Rohs Compliant: Yes

TP2640LG-G

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Microchip

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8-SOIC (0.154", 3.90mm Width)

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MOSFET; P-CHANNEL ENHANCEMENT-MODE; -400V; 15 Ohm8 SOIC 3.90mm(.150in) T/R

CLF1G0035-50,112

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Ampleon USA Inc.

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SOT467C

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RF JFET Transistors Broadband RF power GaN HEMT

CSD17302Q5A

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Texas

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8-PowerTDFN

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; Power Dissipation Pd:3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:87A; Power Dissipation Pd:3W; Voltage Vgs Max:10V

MAGX-000040-00500P

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MA-COM

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SOT-89

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Fet Rf 65V 4GHZ SOT-89

MAGX-000912-500L0S

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MA-COM

：

Transistor Gan 960-1215MHZ 500W

QPD2730

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Qorvo

：

Available stock

：

RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg

PXAC261202FCV1R250XTMA1

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Infineon Technologies

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H-37248-4

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RF MOSFET Transistors RFP-LD10M

PTFA091503ELV4R0XTMA1

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Infineon

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2-Flatpack, Fin Leads, Flanged

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LDMOS FET, High Power RF, 150W, 920-960MHz, H-33288-6 Pkg, T/R 50

IPG20N04S4L07AATMA1

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Infineon

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8-PowerVDFN

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for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent

IPW65R048CFDAFKSA1

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Infineon

：

TO-247-3

：

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS

J108,126

：

NXP Semiconductors

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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Trans JFET N-CH 25V 80mA Si 3-Pin SPT Ammo