15920000498

FDMS8880

  •  FDMS8880
  • image of 射频晶体管 FDMS8880
FDMS8880
RF Transistors
onsemi
Trans MOSFET N-
-
8-PowerTDFN
YES
TYPEDESCRIPTION
Manufacturer Part Number:FDMS8880
Brand Name:ON Semiconductor
Pbfree Code:Yes
Rohs Code:Yes
Part Life Cycle Code:Active
Ihs Manufacturer:ON SEMICONDUCTOR
Package Description:ROHS COMPLIANT, POWER 56, 8 PIN
Manufacturer Package Code:483AE
Reach Compliance Code:not_compliant
ECCN Code:EAR99
HTS Code:8541.29.00.95
Factory Lead Time:1 Week
Manufacturer:ON Semiconductor
Risk Rank:1.18
Avalanche Energy Rating (Eas):60 mJ
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:30 V
Drain Current-Max (Abs) (ID):51 A
Drain Current-Max (ID):13.5 A
Drain-source On Resistance-Max:0.0085 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:MO-240AA
JESD-30 Code:R-PDSO-N5
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:5
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:150 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Power Dissipation-Max (Abs):42 W
Pulsed Drain Current-Max (IDM):80 A
Qualification Status:Not Qualified
Subcategory:FET General Purpose Power
Surface Mount:YES
Terminal Finish:Tin (Sn)
Terminal Form:NO LEAD
Terminal Position:DUAL
[email protected] Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Application:SWITCHING
Transistor Element Material:SILICON
PDF(1)

1

0.8415

0.8415

10

0.8004

8.004

100

0.7594

75.94

500

0.7183

359.15

1000

0.6772

677.2

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