| ： | FDB8860 |
|---|---|
| ： | RF Transistors |
| ： | onsemi |
| ： | N-Channel Logic |
| ： | - |
| ： | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | FDB8860 |
| Brand Name: | ON Semiconductor |
| Pbfree Code: | Yes |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | ON SEMICONDUCTOR |
| Package Description: | SMALL OUTLINE, R-PSSO-G2 |
| Manufacturer Package Code: | 418AJ |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time: | 1 Week |
| Manufacturer: | ON Semiconductor |
| Risk Rank: | 0.68 |
| Samacsys Description: | FDB8860, N-channel MOSFET Transistor, 80 A 30 V, 3-Pin TO-263AB |
| Avalanche Energy Rating (Eas): | 947 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (Abs) (ID): | 80 A |
| Drain Current-Max (ID): | 31 A |
| Drain-source On Resistance-Max: | 0.0027 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code: | TO-263AB |
| JESD-30 Code: | R-PSSO-G2 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 175 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 306 W |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| [email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
3.3015
3.3015
10
3.139
31.39
100
2.9764
297.64
500
2.8038
1401.9
1000
2.6412
2641.2
