15920000498

SI4430BDY-T1-GE3

  •  SI4430BDY-T1-GE3
  • image of 射频晶体管 SI4430BDY-T1-GE3
SI4430BDY-T1-GE3
RF Transistors
Vishay
Source Voltage
-
8-SOIC (0.154", 3.90mm Width)
YES
TYPEDESCRIPTION
Manufacturer Part Number:SI4430BDY-T1-GE3
Rohs Code:Yes
Part Life Cycle Code:Transferred
Ihs Manufacturer:VISHAY SILICONIX
Part Package Code:SOT
Package Description:SMALL OUTLINE, R-PDSO-G8
Pin Count:8
Reach Compliance Code:unknown
ECCN Code:EAR99
Manufacturer:Vishay Siliconix
Risk Rank:7.13
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:30 V
Drain Current-Max (ID):14 A
Drain-source On Resistance-Max:0.0045 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:R-PDSO-G8
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:8
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:150 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):260
Polarity/Channel Type:N-CHANNEL
Qualification Status:Not Qualified
Surface Mount:YES
Terminal Finish:PURE MATTE TIN
Terminal Form:GULL WING
Terminal Position:DUAL
[email protected] Reflow Temperature-Max (s):30
Transistor Element Material:SILICON
PDF(1)

1

2.0636

2.0636

10

1.9619

19.619

100

1.8603

186.03

500

1.7586

879.3

1000

1.6569

1656.9

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