| ： | RD70HVF1-101 |
|---|---|
| ： | RF Transistors |
| ： | Renesas |
| ： | RD70HVF1 is a M |
| ： | - |
| ： | Available stock |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | RD70HVF1-101 |
| Pbfree Code: | Yes |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Obsolete |
| Ihs Manufacturer: | MITSUBISHI ELECTRIC CORP |
| Package Description: | FLANGE MOUNT, R-PDFM-F2 |
| Pin Count: | 2 |
| Reach Compliance Code: | unknown |
| ECCN Code: | EAR99 |
| Manufacturer: | Mitsubishi Electric |
| Risk Rank: | 5.61 |
| Case Connection: | SOURCE |
| Configuration: | SINGLE |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (Abs) (ID): | 20 A |
| Drain Current-Max (ID): | 20 A |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code: | R-PDFM-F2 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Mode: | DEPLETION MODE |
| Operating Temperature-Max: | 175 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | FLANGE MOUNT |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 150 W |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Form: | FLAT |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | AMPLIFIER |
| Transistor Element Material: | SILICON |
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