15920000498
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>QS6J11TR QS6J11TR ROHM - SOT-23-6 Thin, TSOT-23-6 Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R
DataSheet
0.4195
>LB1205M-TLM-E LB1205M-TLM-E onsemi - 16-LSOP (0.213", 5.40mm Width) + 4 Heat Tabs Motor Driver 20-Pin(16+4Tab) MFP-FS T/R
DataSheet
1.696
>LND01K1-G LND01K1-G Microchip - SC-74A, SOT-753 Mosfet, Lateral N-channel Depletion-mode 5 SOT-23 T/r Rohs Compliant: Yes
DataSheet
0.935
>TJ80S04M3L(T6L1,NQ TJ80S04M3L(T6L1,NQ Toshiba - TO-252-3, DPak (2 Leads + Tab), SC-63 Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) DPAK T/R
DataSheet
2.4994
>TK11A50D(STA4,Q,M) TK11A50D(STA4,Q,M) Toshiba - TO-220SIS Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220SIS
DataSheet
2.6794
>ZXMP6A16DN8QTA ZXMP6A16DN8QTA Diodes Inc. - 8-SOIC (0.154", 3.90mm Width) Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
DataSheet
1.4364
>ZXTN19100CFFTA ZXTN19100CFFTA Diodes Inc. - SOT-23-3 Flat Leads :6A; Power Dissipation Pd:1.5W; Power Dissipation Ptot Max:1.5W; Termination Type:SMD; Transistor Type:Power Bipolar; Turn Off Time:133ns; Turn On Time:23.6ns; Voltage Vcbo:200V
DataSheet
0.6162
>ZXTN25012EFLTA ZXTN25012EFLTA Diodes Inc. - TO-236-3, SC-59, SOT-23-3 ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V
DataSheet
0.319
>ZXTN19020CFFTA ZXTN19020CFFTA Diodes Inc. - SOT-23-3 Flat Leads ZXTN19020CFF Series NPN 20 V 7 A High Gain Power Transistor SMT - SOT-23F
DataSheet
0.7039
>ZXTN23015CFHTA ZXTN23015CFHTA Diodes Inc. - TO-236-3, SC-59, SOT-23-3 Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Dc Collector Current:6A; Power Dissipation Pd:1.81W; Transistor Mounting:surface
DataSheet
0.6974
>2SA1954-A(TE85L,F) 2SA1954-A(TE85L,F) Toshiba - USM Trans GP BJT PNP 12V 0.5A 3-Pin USM T/R
DataSheet
market price
>2SC3324-BL(TE85L,F 2SC3324-BL(TE85L,F Toshiba - TO-236 Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
DataSheet
0.1776
>2SC4738-BL(TE85L,F 2SC4738-BL(TE85L,F Toshiba - SC-75, SOT-416 Trans GP BJT NPN 50V 0.15A 3-Pin SSM Embossed T/R
DataSheet
0.0835
>JANTX2N2222AUB JANTX2N2222AUB Microchip - UB JANTX Series 50 V 800 mA 500 mW SMT NPN Switching Transistor - UB-3
DataSheet
17.305
>JANTX2N3019S JANTX2N3019S onsemi - TO-205AD, TO-39-3 Metal Can SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 20ns 68-Pin PLCC
DataSheet
12.764
>PSMN012-100YS,115 PSMN012-100YS,115 Nexperia USA Inc. - SC-100, SOT-669 IGBT Transistors MOSFET N-CHANNEL 100V STD LEVEL MOSFET
DataSheet
1.2629
>PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 Nexperia USA Inc. - SC-100, SOT-669 IGBT Transistors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
DataSheet
1.2608
>PSMN3R7-25YLC,115 PSMN3R7-25YLC,115 NXP Semiconductors - SC-100, SOT-669 PSMN3R7-25YLC - N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology
DataSheet
market price
>ULN2001D1013TR ULN2001D1013TR STMicroelectronics - 16-SOIC (0.154", 3.90mm Width) ULN Series 50V 500 mA High Voltage High Current Seven Darlington Array - SOIC-16
DataSheet
0.3204
>ULQ2003ATPWRQ1 ULQ2003ATPWRQ1 Texas Instruments - 16-TSSOP (0.173", 4.40mm Width) 50-V, 7-ch automotive darlington transistor array 16-TSSOP -40 to 105
DataSheet
0.935
>ULN2003AIDRE4 ULN2003AIDRE4 Texas Instruments - 16-SOIC (0.154", 3.90mm Width) 50-V, 7-ch darlington transistor array, -40 to 105C 16-SOIC -40 to 105
DataSheet
0.6204
>VS-70MT060WHTAPBF VS-70MT060WHTAPBF Vishay - MTP ; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:MTP; No. of Pins:12; Operating Temperature Range:-40°C to +150°C
DataSheet
177.18
>VS-GB100TS60NPBF VS-GB100TS60NPBF Vishay - INT-A-PAK :390W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:INT-A-PAK; No. of Pins:3; MSL:-; Operating Temperature Range:-40°C to +150°C
DataSheet
211.7035
>VS-GA250SA60S VS-GA250SA60S Vishay - SOT-227 Trans IGBT Module N-CH 600V 400A 961000mW 4-Pin SOT-227
DataSheet
184.595
>MMIX1X200N60B3H1 MMIX1X200N60B3H1 IXYS - 24-PowerSMD, 21 Leads Igbt 600V 175A 520W Smpd
DataSheet
78.875
Someone has searched this part IC Chips and others have searched some relevant parts as the following:
ROHM
SOT-23-6 Thin, TSOT-23-6
NO
Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R
onsemi
16-LSOP (0.213", 5.40mm Width) + 4 Heat Tabs
NO
Motor Driver 20-Pin(16+4Tab) MFP-FS T/R
Microchip
SC-74A, SOT-753
NO
Mosfet, Lateral N-channel Depletion-mode 5 SOT-23 T/r Rohs Compliant: Yes
Toshiba
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) DPAK T/R
Toshiba
TO-220SIS
NO
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220SIS
Diodes Inc.
8-SOIC (0.154", 3.90mm Width)
NO
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
Diodes Inc.
SOT-23-3 Flat Leads
NO
:6A; Power Dissipation Pd:1.5W; Power Dissipation Ptot Max:1.5W; Termination Type:SMD; Transistor Type:Power Bipolar; Turn Off Time:133ns; Turn On Time:23.6ns; Voltage Vcbo:200V
Diodes Inc.
TO-236-3, SC-59, SOT-23-3
NO
ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V
Diodes Inc.
SOT-23-3 Flat Leads
NO
ZXTN19020CFF Series NPN 20 V 7 A High Gain Power Transistor SMT - SOT-23F
Diodes Inc.
TO-236-3, SC-59, SOT-23-3
NO
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Dc Collector Current:6A; Power Dissipation Pd:1.81W; Transistor Mounting:surface
Toshiba
USM
NO
Trans GP BJT PNP 12V 0.5A 3-Pin USM T/R
Toshiba
TO-236
NO
Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
Toshiba
SC-75, SOT-416
NO
Trans GP BJT NPN 50V 0.15A 3-Pin SSM Embossed T/R
Microchip
UB
NO
JANTX Series 50 V 800 mA 500 mW SMT NPN Switching Transistor - UB-3
onsemi
TO-205AD, TO-39-3 Metal Can
NO
SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 20ns 68-Pin PLCC
Nexperia USA Inc.
SC-100, SOT-669
NO
IGBT Transistors MOSFET N-CHANNEL 100V STD LEVEL MOSFET
Nexperia USA Inc.
SC-100, SOT-669
NO
IGBT Transistors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
NXP Semiconductors
SC-100, SOT-669
NO
PSMN3R7-25YLC - N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology
STMicroelectronics
16-SOIC (0.154", 3.90mm Width)
NO
ULN Series 50V 500 mA High Voltage High Current Seven Darlington Array - SOIC-16
Texas Instruments
16-TSSOP (0.173", 4.40mm Width)
NO
50-V, 7-ch automotive darlington transistor array 16-TSSOP -40 to 105
Texas Instruments
16-SOIC (0.154", 3.90mm Width)
NO
50-V, 7-ch darlington transistor array, -40 to 105C 16-SOIC -40 to 105
Vishay
MTP
NO
; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:MTP; No. of Pins:12; Operating Temperature Range:-40°C to +150°C
Vishay
INT-A-PAK
NO
:390W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:INT-A-PAK; No. of Pins:3; MSL:-; Operating Temperature Range:-40°C to +150°C
Vishay
SOT-227
NO
Trans IGBT Module N-CH 600V 400A 961000mW 4-Pin SOT-227
IXYS
24-PowerSMD, 21 Leads
NO
Igbt 600V 175A 520W Smpd

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