| ： | PSMN1R0-30YLC,115 |
|---|---|
| ： | Transistors |
| ： | Nexperia USA Inc. |
| ： | IGBT Transistor |
| ： | - |
| ： | SC-100, SOT-669 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | PSMN1R0-30YLC,115 |
| Brand Name: | Nexperia |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | NEXPERIA |
| Part Package Code: | SOIC |
| Package Description: | SMALL OUTLINE, R-PSSO-G4 |
| Pin Count: | 4 |
| Manufacturer Package Code: | SOT669 |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | Nexperia |
| Risk Rank: | 1 |
| Samacsys Description: | NEXPERIA - PSMN1R0-30YLC,115 - MOSFET, N CH, 30V, 100A, LFPAK |
| Additional Feature: | HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas): | 259 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (ID): | 100 A |
| Drain-source On Resistance-Max: | 0.0014 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code: | MO-235 |
| JESD-30 Code: | R-PSSO-G4 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 4 |
| Operating Mode: | ENHANCEMENT MODE |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Polarity/Channel Type: | N-CHANNEL |
| Pulsed Drain Current-Max (IDM): | 1450 A |
| Reference Standard: | IEC-60134 |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
1.2608
1.2608
10
1.1992
11.992
100
1.1377
113.77
500
1.0761
538.05
1000
1.0046
1004.6
