| ： | TJ80S04M3L(T6L1,NQ |
|---|---|
| ： | Transistors |
| ： | Toshiba |
| ： | Trans MOSFET P- |
| ： | - |
| ： | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | TJ80S04M3L(T6L1,NQ |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | TOSHIBA CORP |
| Package Description: | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code: | unknown |
| Factory Lead Time: | 12 Weeks |
| Manufacturer: | Toshiba America Electronic Components |
| Risk Rank: | 5.69 |
| Avalanche Energy Rating (Eas): | 148 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 40 V |
| Drain Current-Max (Abs) (ID): | 80 A |
| Drain Current-Max (ID): | 80 A |
| Drain-source On Resistance-Max: | 0.0079 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | R-PSSO-G2 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Polarity/Channel Type: | P-CHANNEL |
| Power Dissipation-Max (Abs): | 100 W |
| Pulsed Drain Current-Max (IDM): | 160 A |
| Reference Standard: | AEC-Q101 |
| Surface Mount: | YES |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
2.4994
2.4994
10
2.3769
23.769
100
2.2444
224.44
500
2.1219
1060.95
1000
1.9995
1999.5
