: | LND01K1-G |
---|---|
: | Transistors |
: | Microchip |
: | Mosfet, Lateral |
: | - |
: | SC-74A, SOT-753 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer Part Number: | LND01K1-G |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Ihs Manufacturer: | MICROCHIP TECHNOLOGY INC |
Package Description: | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code: | compliant |
ECCN Code: | EAR99 |
Factory Lead Time: | 6 Weeks |
Manufacturer: | Microchip Technology Inc |
Risk Rank: | 1.16 |
Samacsys Description: | MOSFET Lateral N-Ch MOSFET Depletion-Mode |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (Abs) (ID): | 0.33 A |
Drain Current-Max (ID): | 0.33 A |
Drain-source On Resistance-Max: | 1.4 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code: | MO-178AA |
JESD-30 Code: | R-PDSO-G5 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 1 |
Number of Elements: | 1 |
Number of Terminals: | 5 |
Operating Mode: | DEPLETION MODE |
Operating Temperature-Max: | 125 °C |
Operating Temperature-Min: | -25 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Power Dissipation-Max (Abs): | 0.36 W |
Reference Standard: | TS 16949 |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | DUAL |
[email protected] Reflow Temperature-Max (s): | 40 |
Transistor Application: | SWITCHING |
Transistor Element Material: | SILICON |
1
0.935
0.935
10
0.8818
8.818
100
0.8385
83.85
500
0.7953
397.65
1000
0.742
742