15920000498

PSMN012-100YS,115

  •  PSMN012-100YS,115
  • image of 晶体管 PSMN012-100YS,115
PSMN012-100YS,115
Transistors
Nexperia USA Inc.
IGBT Transistor
-
SC-100, SOT-669
YES
TYPEDESCRIPTION
Manufacturer Part Number:PSMN012-100YS,115
Brand Name:Nexperia
Part Life Cycle Code:Active
Ihs Manufacturer:NEXPERIA
Part Package Code:SOIC
Package Description:SMALL OUTLINE, R-PSSO-G4
Pin Count:4
Manufacturer Package Code:SOT669
Reach Compliance Code:not_compliant
Factory Lead Time:16 Weeks
Manufacturer:Nexperia
Risk Rank:0.98
Avalanche Energy Rating (Eas):170 mJ
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:100 V
Drain Current-Max (ID):60 A
Drain-source On Resistance-Max:0.012 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:MO-235
JESD-30 Code:R-PSSO-G4
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:4
Operating Mode:ENHANCEMENT MODE
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Polarity/Channel Type:N-CHANNEL
Pulsed Drain Current-Max (IDM):242 A
Surface Mount:YES
Terminal Finish:Tin (Sn)
Terminal Form:GULL WING
Terminal Position:SINGLE
Transistor Application:SWITCHING
Transistor Element Material:SILICON
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