| ： | QS8J4TR |
|---|---|
| ： | 晶体管 |
| ： | ROHM |
| ： | Transistor MOSF |
| ： | - |
| ： | TSMT8 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | QS8J4TR |
| Pbfree Code: | Yes |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | ROHM CO LTD |
| Package Description: | SMALL OUTLINE, R-PDSO-F8 |
| Pin Count: | 8 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| Factory Lead Time: | 16 Weeks |
| Manufacturer: | ROHM Semiconductor |
| Risk Rank: | 1.65 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (Abs) (ID): | 4 A |
| Drain Current-Max (ID): | 4 A |
| Drain-source On Resistance-Max: | 0.056 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | R-PDSO-F8 |
| JESD-609 Code: | e2 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 2 |
| Number of Terminals: | 8 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | 260 |
| Polarity/Channel Type: | P-CHANNEL |
| Power Dissipation-Max (Abs): | 1.5 W |
| Pulsed Drain Current-Max (IDM): | 16 A |
| Qualification Status: | Not Qualified |
| Subcategory: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Copper (Sn/Cu) |
| Terminal Form: | FLAT |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | 10 |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
1
0.66
0.66
10
0.6235
6.235
100
0.597
59.7
500
0.5605
280.25
1000
0.524
524
