: | HN2C01FU-GR(T5L,F) |
---|---|
: | 分立半导体 |
: | Toshiba |
: | Trans GP BJT NP |
: | - |
: | US6 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer Part Number: | HN2C01FU-GR(T5L,F) |
Pbfree Code: | Yes |
Part Life Cycle Code: | Active |
Ihs Manufacturer: | TOSHIBA CORP |
Package Description: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown |
Manufacturer: | Toshiba America Electronic Components |
Risk Rank: | 1.61 |
Collector Current-Max (IC): | 0.15 A |
Collector-Base Capacitance-Max: | 3.5 pF |
Collector-Emitter Voltage-Max: | 50 V |
Configuration: | SEPARATE, 2 ELEMENTS |
DC Current Gain-Min (hFE): | 200 |
JESD-30 Code: | R-PDSO-G6 |
Number of Elements: | 2 |
Number of Terminals: | 6 |
Operating Temperature-Max: | 125 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Polarity/Channel Type: | NPN |
Power Dissipation Ambient-Max: | 0.2 W |
Power Dissipation-Max (Abs): | 0.2 W |
Surface Mount: | YES |
Terminal Form: | GULL WING |
Terminal Position: | DUAL |
Transistor Application: | AMPLIFIER |
Transistor Element Material: | SILICON |
Transition Frequency-Nom (fT): | 80 MHz |
VCEsat-Max: | 0.25 V |
1
0.1561
0.1561
10
0.1423
1.423
100
0.1385
13.85
500
0.1247
62.35
1000
0.1209
120.9