| ： | HN2A01FU-GR(TE85LF |
|---|---|
| ： | 分立半导体 |
| ： | Toshiba |
| ： | Trans GP BJT PN |
| ： | - |
| ： | US6 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | HN2A01FU-GR(TE85LF |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | TOSHIBA CORP |
| Package Description: | SMALL OUTLINE, R-PDSO-G6 |
| Reach Compliance Code: | unknown |
| Manufacturer: | Toshiba America Electronic Components |
| Risk Rank: | 1.64 |
| Collector Current-Max (IC): | 0.15 A |
| Collector-Base Capacitance-Max: | 7 pF |
| Collector-Emitter Voltage-Max: | 50 V |
| Configuration: | SEPARATE, 2 ELEMENTS |
| DC Current Gain-Min (hFE): | 200 |
| JESD-30 Code: | R-PDSO-G6 |
| Number of Elements: | 2 |
| Number of Terminals: | 6 |
| Operating Temperature-Max: | 125 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Polarity/Channel Type: | PNP |
| Power Dissipation Ambient-Max: | 0.2 W |
| Power Dissipation-Max (Abs): | 0.2 W |
| Surface Mount: | YES |
| Terminal Form: | GULL WING |
| Terminal Position: | DUAL |
| Transistor Application: | AMPLIFIER |
| Transistor Element Material: | SILICON |
| Transition Frequency-Nom (fT): | 80 MHz |
| VCEsat-Max: | 0.3 V |
1
0.12
0.12
10
0.117
1.17
100
0.104
10.4
500
0.101
50.5
1000
0.098
98
