15920000498

SIR846DP-T1-GE3

  •  SIR846DP-T1-GE3
  • image of  晶体管 SIR846DP-T1-GE3
SIR846DP-T1-GE3
Transistors
Vishay Semiconductors
MOSFET 100V 60A
-
PowerPAK-SO-8
YES
TYPEDESCRIPTION
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 6.4 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 72 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 104 W
Channel Mode: Enhancement
Tradename: TrenchFET, PowerPAK
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand:Vishay Semiconductors
Configuration:Single
Fall Time:10 ns
Forward Transconductance - Min:56 S
Product Type:MOSFET
Rise Time:9 ns
Series:SIR
Factory Pack Quantity: Factory Pack Quantity:3000
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:36 ns
Typical Turn-On Delay Time:15 ns
Part # Aliases:SIR846DP-GE3
Unit Weight:0.017870 oz
PDF(1)

1

5.2

5.2

10

4.66

46.6

25

4.52

113

100

3.74

374

500

3.08

1540

1000

2.68

2680

3000

2.66

7980

captcha

15920000498

leo@cseker.com
0