| ： | SIHB068N60EF-GE3 |
|---|---|
| ： | Transistors |
| ： | Vishay Semiconductors |
| ： | MOSFET 600V N-C |
| ： | - |
| ： | |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 41 A |
| Rds On - Drain-Source Resistance: | 68 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Qg - Gate Charge: | 51 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 250 W |
| Channel Mode: | Enhancement |
| Brand: | Vishay Semiconductors |
| Product Type: | MOSFET |
| Series: | EF |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | MOSFETs |
1
11.62
11.62
10
10.44
104.4
25
10.16
254
100
8.54
854
