: | QPD1015L |
---|---|
: | 晶体管 |
: | Qorvo |
: | RF JFET Transis |
: | - |
: | NI-360 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer: | Qorvo |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN-on-SiC |
Operating Frequency: | 3.7 GHz |
Gain: | 20 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Breakdown Voltage: | 145 V |
Id - Continuous Drain Current: | 2.5 A |
Output Power: | 70 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C |
Pd - Power Dissipation: | 64 W |
Mounting Style: | Screw Mount |
Package / Case: | NI-360 |
Packaging: | Tray |
Brand: | Qorvo |
Configuration: | Single |
Development Kit: | QPD1015LPCB401 |
Moisture Sensitive: | Yes |
Operating Temperature Range: | - 40 C to + 85 C |
Product Type: | RF JFET Transistors |
Series: | QPD1015L |
Factory Pack Quantity: Factory Pack Quantity: | 25 |
Subcategory: | Transistors |
Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
Unit Weight: | 0.809714 oz |
1
616.2
616.2
25
410.8
10270
100
market price
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