: | QPD1009 |
---|---|
: | 晶体管 |
: | Qorvo |
: | RF JFET Transis |
: | - |
: | QFN-16 |
: | YES |
TYPE | DESCRIPTION |
Manufacturer: | Qorvo |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN-on-SiC |
Operating Frequency: | 4 GHz |
Gain: | 24 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Breakdown Voltage: | 145 V |
Id - Continuous Drain Current: | 700 mA |
Output Power: | 17 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C |
Pd - Power Dissipation: | 17.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | QFN-16 |
Packaging: | Tray |
Brand: | Qorvo |
Configuration: | Single |
Development Kit: | QPD1009-EVB1 |
Moisture Sensitive: | Yes |
Operating Temperature Range: | - 40 C to + 85 C |
Product Type: | RF JFET Transistors |
Series: | QPD1009 |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Subcategory: | Transistors |
Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
Part # Aliases: | 1132865 1132865 |
Unit Weight: | 0.203046 oz |
1
132.58
132.58
25
66.3
1657.5
100
61.64
6164
250
59
14750
500
market price
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