| ： | QPD1008 |
|---|---|
| ： | 晶体管 |
| ： | Qorvo |
| ： | RF JFET Transis |
| ： | - |
| ： | NI-360 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 3.2 GHz |
| Gain: | 17.5 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Breakdown Voltage: | 145 V |
| Id - Continuous Drain Current: | 4 A |
| Output Power: | 162 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Pd - Power Dissipation: | 127 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI-360 |
| Packaging: | Tray |
| Brand: | Qorvo |
| Configuration: | Single |
| Development Kit: | QPD1008PCB401 |
| Moisture Sensitive: | Yes |
| Operating Temperature Range: | - 40 C to + 85 C |
| Product Type: | RF JFET Transistors |
| Series: | QPD1008 |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Subcategory: | Transistors |
| Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
| Unit Weight: | 0.566059 oz |
1
644.08
644.08
25
478.96
11974
