: | IPT030N12N3GATMA1 |
---|---|
: | Transistors |
: | Infineon Technologies |
: | MOSFET TRENCH & |
: | - |
: | |
: | YES |
TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 120 V |
Id - Continuous Drain Current: | 237 A |
Rds On - Drain-Source Resistance: | 3 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 158 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 375 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Product Type: | MOSFET |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Subcategory: | MOSFETs |
Part # Aliases: | IPT030N12N3 G SP005348026 |
1
11.5
11.5
10
10.34
103.4
100
8.46
846
500
7.24
3620
2000
7.22
14440