| ： | IXFN110N85X |
|---|---|
| ： | Discrete Semiconductor Modules |
| ： | IXYS |
| ： | Discrete Semico |
| ： | - |
| ： | SOT-227-4 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | HiPerFET |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 110 A |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 1.17 kW |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 33 mOhms |
| Rise Time: | 25 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 144 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 850 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Unit Weight: | 1.058219 oz |
1
111.54
111.54
10
104.78
1047.8
30
101.4
3042
