| ： | GCMS020A120S1-E1 |
|---|---|
| ： | 分立半导体模块 |
| ： | SemiQ |
| ： | Discrete Semico |
| ： | - |
| ： | SOT-227-4 |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | SemiQ |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Type: | SiC Power Module |
| Vf - Forward Voltage: | 1.54 V |
| Vr - Reverse Voltage: | 1200 V |
| Vgs - Gate-Source Voltage: | - 10 V, 25 V |
| Mounting Style: | Screw Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Brand: | SemiQ |
| Fall Time: | 35 ns |
| Id - Continuous Drain Current: | 120 A |
| Operating Supply Voltage: | - |
| Pd - Power Dissipation: | 640 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Rise Time: | 53 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | SiC |
| Transistor Polarity: | N-Channel and SBD |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
1
249.7
249.7
5
241.12
1205.6
