| ： | BSM600C12P3G201 |
|---|---|
| ： | 分立半导体模块 |
| ： | ROHM Semiconductor |
| ： | Discrete Semico |
| ： | - |
| ： | Module |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Type: | SiC Power Module |
| Vf - Forward Voltage: | 1.8 V at 600 A |
| Vgs - Gate-Source Voltage: | - 4 V, 22 V |
| Mounting Style: | Screw Mount |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | BSMx |
| Packaging: | Tray |
| Brand: | ROHM Semiconductor |
| Configuration: | Chopper |
| Fall Time: | 65 ns |
| Id - Continuous Drain Current: | 576 A |
| Pd - Power Dissipation: | 2460 W |
| Product Type: | Discrete Semiconductor Modules |
| Rise Time: | 50 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 4 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Typical Delay Time: | 70 ns |
| Typical Turn-Off Delay Time: | 240 ns |
| Typical Turn-On Delay Time: | 70 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Unit Weight: | 1.131 lbs |
1
2319.84
2319.84
4
2239.94
8959.76
