| ： | NTMFS4833NST1G |
|---|---|
| ： | RF Transistors |
| ： | onsemi |
| ： | Power MOSFET, S |
| ： | - |
| ： | 8-PowerTDFN |
| ： | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | NTMFS4833NST1G |
| Brand Name: | ON Semiconductor |
| Pbfree Code: | Yes |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Obsolete |
| Ihs Manufacturer: | ON SEMICONDUCTOR |
| Part Package Code: | DFN |
| Package Description: | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, CASE 506BQ-01, DFN8, SOP-8 |
| Pin Count: | 8 |
| Manufacturer Package Code: | 506BQ |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | ON Semiconductor |
| Risk Rank: | 5.82 |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
| DS Breakdown Voltage-Min: | 30 V |
| Drain Current-Max (Abs) (ID): | 156 A |
| Drain Current-Max (ID): | 16 A |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | R-PDSO-F8 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 8 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 86.2 W |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| Terminal Form: | FLAT |
| Terminal Position: | DUAL |
| [email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
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